Abstract
Differential resistivity and Hall-effect measurements have been utilized to study the annealing behavior and electrical carrier-distribution profiles of Be-implanted GaAs. A maximum of 90–100% electrical activation occurs during 900 °C anneals for implanted Be concentrations less than ∼5×1018 cm−3. For higher fluences, however, a heavily concentration-dependent diffusion is observed, and the measured electrical activation is complicated by outdiffusion of Be into the Si3N4 encapsulant. In these cases, a maximum in the electrical activation appears for annealing near 700 °C. Low-temperature (5 °K) photoluminescence substantiates previous findings that 900 °C annealing results in maximum optical activation and lattice recovery.
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