Abstract
The general goal of this work is to study the structure and photoelectrical properties of the electrochemically deposited thin CdTe films. The conducted investigation has shown that (i) as-deposited films have the single-phase structure with a grain size of 1–10 μm and are of the n-type conductivity; (ii) photosensitivity abruptly decreases when the film thickness is over 10 μm; (iii) annealing at temperatures less than 500 °C improves the film quality with retention of the n-type conductivity; and (iv) photosensitivity of the films is not impaired under irradiation by 6 MeV electrons with a fluence of 5 × 10 14 cm − 2 .
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