Abstract
Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.
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