Electrical performance of CdHgTe photodiodes for 1.30 and 1.55 μm

Abstract

Hg1−x CdxTe-based (x ≈ 0.64 and 0.71) surface-barrier diodes that are photosensitive at 1.30 and 1.55 μm are investigated. The parameters governing the photoelectric performance of the diodes—the concentration of majority carriers, position of the Fermi level in the substrate, contact potential, width of the space-charge region, and effective lifetime of carriers—are found. The electric characteristics measured at temperatures of 268–340 K testify the generation-recombination mechanism of charge transfer. At elevated reverse biases, high-field effects come into play.