Electrical Performance Enhancement of Fully Solution-processed Amorphous In-Zn-O Thin-Film Transistor via Argon Plasma Treatment

Abstract

This work aims to improve the electrical performance of fully solution processed oxide TFT by applying Argon plasma treatment. In this work, we successfully fabricated fully solution processed amorphous Indium Zinc Oxide thin-film (a-IZO) thin-film transistor (TFT). Before performing the plasma treatment, the electrode of the samples is still inactivated. Argon plasma treatment can activate the electrode and induce TFT switching. The electrical performance of a-IZO TFT was enhanced by varying Argon gas flow rate (50, 75, and 100 sccm) for 5 s. As a result, high mobility of up to 31.12 cm2/Vs was achieved by 75 sccm Argon plasma treatment. These results show that performance enhancement of fully-solution processed a-IZO TFT by plasma treatment has a large potential for future low-temperature flexible device applications.