Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques

Z Xu,W.T Ng,P.T Lai

doi:10.1109/hkedm.1994.395138

Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques

Z Xu, W.T Ng + Show 1 more

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https://doi.org/10.1109/hkedm.1994.395138

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Publication Date: Jul 18, 1994

License type: cc-by-nc-nd

Affiliation: University of Hong Kong

#Reliability Of n-MOSFET #Performance Of n-MOSFET + Show 8 more

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Abstract

In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N/sub 2/O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH/sub 3/ nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress. >

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