Abstract
In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown using hydride vapor phase epitaxy (HVPE). To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky Barrier Diodes (SBDs), a dual ion co-implantation of carbon and helium was used to create the edge termination. The resulting devices exhibited low turn-on voltage of 0.55 V, high Ion/Ioff of approximately 109, and low specific on-resistance of 1.93 mΩ·cm2. With the ion implantation edge termination, the devices achieved a maximum VBR of 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW/cm2 and showed excellent reliability during pulse stress testing.
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