Electrical performance and photosensitive properties of Cu/SiO2/Si –MOS based junction prepared by liquid phase epitaxy

Abstract

Cu/SiO2/p-Si MOS junctions were made by the use of liquid phase epitaxy (LPE). Recognition of Crystalline structure was done by using x-ray diffraction. The results of ε′, permittivity, and ε″, dielectric loss, were found to depend on bias voltage and frequency. Forward voltage and frequency decreased the series resistance. Temperature dependent current–voltage characteristics of Cu/SiO2/p-Si MOS junctions were studied to elucidate the conduction mechanisms and extract the important parameters. The ideality factor high value was clarified according to the possibility of the existence of interfacial states and/or the influence of inhomogeneity of the barrier. Series and shunt resistances (Rs, Rsh) showed temperature dependence. The conduction mechanism under forward bias was described in consistent with ohmic and space charge limited conduction depending on the voltage range. This behaviour can be elucidated on the basis of the inhomogeneity of barrier height owing to the non-uniform junction interface [40]. The operating conduction mechanism during reverse bias was ascribed to Poole-Frenkel effect. Cu/SiO2/p-Si MOS junctions showed photo transient characteristics when submitted to illumination of 100 mW/cm2.