Abstract
The current–voltage ( I– V) and capacitance–voltage ( C– V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature range of 80–320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features.
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