Abstract
Hydrogenated amorphous quaternary alloy (a-SiNGe:H) films have been synthesized by r.f. glow-discharge (GD) decomposition of gas mixtures of silane, germane, nitrogen and helium. The effects of nitrogen on the structural, optical, electrical and optoelectronic properties of the films prepared at various nitrogen-silane flow-rates have been investigated. The incorporation of small amounts of nitrogen slightly increases the dark conductivity, while the optical bandgap remains almost unchanged. The large incorporation leads to a decrease of the dark and photoconductivity and an increase of the optical bandgap by forming an alloy with nitrogen. Activation energies of the dark conductivity show a minimum against nitrogen contents. The results reveal that incorporation of small amounts of nitrogen in the films relaxes the structural disorder and/or decreases the density of defects, as well as acting as dopant.
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