Abstract
We report on growth, fabrication and characterization of the metal–semiconductor–metal (MSM) photodiode based on type-II ZnSe/ZnTe heterostructure. Heterostructure was grown on semi-insulating GaAs substrates by MOVPE. For the first time we present the results of experimental investigations of the MSM photodetector on the base of type-II ZnSe/ZnTe superlattice. The MSM-photodetector demonstrates very low dark current, high current sensitivity and external quantum efficiency. The maximum photoresponse of the MSM-detector at the wavelength 620 nm corresponds to current sensitivity 0.22 A/W and external quantum efficiency 44%. Photoresponse of the MSM-detector shows two peaks of response located at 620 nm and 870 nm. ZnSe/ZnTe type-II superlattice structure reduces the MSM-diode dark current significantly. For the MSM-diode with finger width and gap of 3 µm and 100 × 100 µm2 photosensitive area we have obtained dark current density 10−8 A/cm2 at room temperature.
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