Abstract
Conjugated polymers and their derivatives are of great importance for their applications in electronic and optoelectronic devices. Here, Bulk Heterojunction (BHJ) photovoltaic device having the structure ITO/PEDOT:PSS/P3HT:PCBM/graphene/Al has been fabricated and examined under both dark and illumination conditions. Absorption study confirms the formation of P3HT:PCBM BHJ. Raman spectra show the similar modes for P3HT:PCBM BHJ as pristine P3HT. I-V behavior of the device is found to be very similar to the Schottky behavior under both dark and illumination conditions. Higher change in reverse current as compare to forward current under illumination condition suggests the device exhibit photovoltaic behavior. Double logarithmic J-V characteristics curve shows an overall power law trend, resulting in Ohmic conduction at lower voltage and trap charge limited conduction (TCLC) with the increase in the voltage.
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