Year-end Sale % OFF 
Abstract
Nitrogen is incorporated with different contents into ultra-thin HfTiO dielectric films deposited on Si (100) substrate by radio frequency (RF) magnetron sputtering under a N2 atmosphere. The improved thermal stability and surface microstructure are demonstrated by X-ray diffraction (XRD) and atomic force microscope (AFM) due to the incorporation of nitrogen. The optical characterization of the ultra-thin HfTiON films exhibits a large band gap attributed to nitrogen doping, and a reduction in band gap with increase of N-doped concentration. More importantly, electrical properties of ultra-thin HfTiON films related to different nitrogen-incorporated content are systematically investigated. The N-doped content of HfTiON films deposited under Ar/N2 flow ratio of 30/15 (sccm) has been proved to be an optimal amount, based on which HfTiON films through 500°C rapid thermal annealing (RTA) treatment further achieve the most favorably excellent electrical properties in terms of a lower gate leakage current density of 7.72×10−6A/cm2 and a higher permittivity of 35.31. Moreover, the dominant conduction mechanisms of Pt/HfTiON/p-Si structures for both as-deposited and annealed HfTiON films are discussed by data fitting method in details.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
