Abstract
The current-voltage characteristics of Si/SiO2 superlattices arenumerically computed as a function of a number of physical parameters such asthe number of Si wells, the Si and SiO2 film thickness, the temperature,etc. It is assumed that the Si layers form two-dimensional systems,communicating to one another through tunnel SiO2 barriers, without quantumcoherence between one Si well and its next nearest neighbours. From thenumerical results, we derive a number of simple conclusions regarding theoptimization of such confined structures, in view of maximizing theirelectroluminescence efficiency.
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