Electrical memory devices based on inorganic/organic nanocomposites

Tae Whan Kim,Wei Lek Kwan,Yang Yang,Fushan Li

doi:10.1038/am.2012.32

Tae Whan Kim, Wei Lek Kwan + Show 2 more

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https://doi.org/10.1038/am.2012.32

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Abstract

Tae Whan Kim and co-workers review how nanocomposite materials that combine organic and inorganic materials are attractive for use in memory components. A wide variety of structures have been used to store information by switching between two states, making for either volatile or nonvolatile memory systems; well-known examples of both types are random access memory (RAM) and computer hard disks, respectively. Among those, hybrid organic-inorganic devices–such as a polymer matrix in which metal nanoparticles have been incorporated–are easy to make, cost-effective, mechanically flexible, and efficient. Further studies will endeavour to better understand the memories' mechanisms and improve their switching speed and reproducibility. These hybrid structures are particularly promising for the development of flexible memories required to construct the next generation of portable devices.

Highlights

One advantage of thermal evaporation is that multiple layers of organic thin films can be deposited uniformly over a large area
DEVICE STRUCTURE AND FABRICATION OF THE NONVOLATILE MEMORY DEVICE Fabrication of nonvolatile memory devices by utilizing the evaporation method A typical structure for a hybrid organic/inorganic nonvolatile memory device consists of composite organic molecules: metal/semiconductor nanoparticles layer sandwiched between two metal electrodes
The results indicate that the hybrid bistable memory devices are prospects for potential applications in flexible nonvolatile flash memory devices.[96]

Summary

Introduction

One advantage of thermal evaporation is that multiple layers of organic thin films can be deposited uniformly over a large area. Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices.

Results

Conclusion