Abstract
We reported on the influence of the structural properties of zinc oxide nanoparticles (ZnO NPs) on electrical bi-stable device based on an aluminum/poly(9-vinylcarbazole):ZnO NPs/indium-tin oxide structure. ZnO NPs were synthesized by simple precipitation method with different annealing temperatures. When annealing temperature was increased, the ZnO NPs crystallite increased and the ZnO NPs gradually changed shape from nanostar-like to nanospherical. The structural parameters, such as the crystallite size of ZnO NPs and dislocation density, can be calculated from the XRD spectra. The effect of ZnO NPs annealing temperature on memory properties can be measured by current-voltage characteristics and retention time measurements. The maximum ON/OFF current ratio for the memory devices was about 103 and the devices exhibited the Write-Once, Read-Many (WORM) memory type. The operating mechanisms of the memory device were analyzed using theoretical models, in which electrons trapping in the ZnO NPs and electrons tunneling among a PVK matrix by direct tunneling process were discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
