Abstract
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa(1-x)As heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa(1-x)As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.
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