Abstract
Bismuth Layer Structured Ferroelectric (BLSF) ceramic of La0.75Bi3.25Ti3O12, (BLT) abbreviated as future promising ferroelectric random access memory materials was prepared by the conventional solid-state reaction method. Resistivity and dielectric measurements were made as a function of temperature and frequency. The remnant polarization (Pr) is found to be 16 C/cm 2 . The ferroelectric results were corroborated with the electrical impedance, resistivity and hysteresis properties
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