Abstract
Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.
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