Electrical manipulation of antiferromagnetic order in PtMn and PtMn3 pillars

Abstract

Antiferromagnets (AFMs) are magnetically ordered materials without a macroscopic magnetization. There is accelerating interest in using them for memory applications, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects [1-2]. Here we show that micrometer-scale bits of the antiferromagnet PtMn, grown on a Ta or Pt heavy metal (HM) layer, can be switched reversibly between different magnetic states by electric currents, with readout through a second harmonic voltage technique [3]. The device exhibits multiple states, which can be set using different current amplitudes and may find application in neuromorphic computing. Micromagnetic simulations suggest that these metastable states consist of vortex and anti-vortex textures that move in response to current. We also demonstrate, using a modified device layout, direct voltage measurements to read out the electrically-induced switching of noncollinear PtMn3. The modified layout and measurement methodology, which was recently demonstrated using the IrMn3/Pt material system [4], is utilized here to distinguish current-induced magnetic and nonmagnetic switching signals in PtMn3/Pt devices. We also realize switching down to 10 µs pulse width, which shows the potential for fast device applications. The effect of temperature and external magnetic field (up to 15 T) are also studied. Our results pave the way towards practical PtMn and PtMn3 antiferromagnetic memories integrated on silicon, and indicate the importance of micromagnetic textures in the static and dynamic behavior of antiferromagnetic devices.