Abstract
The remarkable properties of graphene and transition metal dichalcogenides (TMDCs) have attracted increasing attention on two-dimensional materials, but the gate oxide, one of the key components of two-dimensional electronic devices, has rarely reported. We found the single-layer oxide can be used as the two dimensional gate oxide in 2D electronic structure, such as TiO2. However, the electrical performance is seriously influenced by the defects existing in the single-layer oxide. In this paper, a nondestructive and noncontact solution based on spectroscopic ellipsometry has been used to detect the defect states and energy level of single-layer TiO2 films. By fitting the Lorentz oscillator model, the results indicate the exact position of defect energy levels depends on the estimated band gap and the charge state of the point defects of TiO2.
Highlights
The remarkable properties of graphene and transition metal dichalcogenides (TMDCs) have attracted increasing attention on two-dimensional materials, but the gate oxide, one of the key components of two-dimensional electronic devices, has rarely reported
By fitting the Lorentz oscillator model, the results indicate the exact position of defect energy levels depends on the estimated band gap and the charge state of the point defects of TiO2
Even hexagonal boron nitride (h-BN) is an appealing substrate dielectric for use in improved 2D nanoelectronic devices, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps[7], but h-BN is not suitable for being used in semiconductor manufacturing process, for it cannot be widely used in the CMOS manufacturing technology
Summary
The remarkable properties of graphene and transition metal dichalcogenides (TMDCs) have attracted increasing attention on two-dimensional materials, but the gate oxide, one of the key components of two-dimensional electronic devices, has rarely reported. Many two-dimensional materials, such as graphene[1,2] and TMDCs3,4, have received increasing attention due to their potential for applications in 2D nanoelectronic devices[5,6] Both the graphene and the TMDCs, used as channel materials in devices, are special materials of thin electrical and thermal conductor, with high carrier mobility properties. Deep-level transient spectra (DLTS) and thermally stimulated current (TSC) methods are used to measure the electrical levels of film defects These methods have some limitations and special requirements for samples, they are difficult for this application. A nondestructive and noncontact method[21] based on spectroscopic ellipsometry was introduced to investigate the optical properties and electrical levels of point defects of single-layer TiO2. Based on the detailed SE analysis and fitted by the Lorentz oscillator model, we got the electrical levels of various different charged defects in single-layer TiO2 films
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