Abstract
A single-energy isolation scheme is applied to both n-type GaAs and n-type InP using helium ion irradiation at room temperature (RT), 100 °C and 200 °C to create thermally stable highly resistive regions. It is found that optimum isolation and its persistence to the further heat treatment is very much influenced by the implant temperature in the case of n-type GaAs. Isolation caused by hot implants in GaAs layers is more effective and has an improved thermal stability over RT implants which is due to the formation of thermally stable defects during implantation at elevated temperatures. No such behavior is found in the case of n-type InP though the same isolation-implant conditions were applied to both materials. For helium-isolated n-type InP samples, RT implants are as effective as hot implants and the behavior of the sheet resistivity for all substrate temperatures is identical. The isolation scheme used in this work looks promising since such high isolation values (∼107 Ω/)□ with a broad thermally stable window are obtained for n-type InP material.
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