Abstract
Indium sulfide thin film has been deposited by spray pyrolysis technique at 340 °C. Structural analysis by XRD and Raman analysis confirm that this sample is polycrystalline, belongs to the β cubic phase and has no secondary phases. The crystallite size is around 32 nm. Morphological study shows that the surface is entirely protected with grains of different sizes and have continuous surface. Electrical properties of In2S3 thin film show that the conductance increases with increasing measurement temperature. The film conduction mechanism can be explained in terms of correlated barrier hopping (CBH) model. Activation energies deduced from relaxation time and conductance is very close which indicate that the relaxation and electrical conduction processes are related to the same origin. Nyquist diagram shows the appearance of semicircles whose radius R (R: resistance) decreases with the increase of temperature. The obtained In2S3 equivalent circuit consisted of R and CPE connected in parallel one to another.
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