Abstract
We have constructed field-effect transistor structures that consist of a ferromagnetic (La,Ba)MnO3 channel and a ferroelectric PbZr0.2Ti0.8O3 gate insulator with the aim of controlling the metal–insulator transition at room temperature by applying an electric field. Investigations have revealed that the transition temperature changed from 237.0 K to 242.0 K for the La0.90Ba0.10MnO3 channel layer by ferroelectric remnant polarity (±50 μC/cm2) and from 280.5 K to 283.0 K (±26 μC/cm2) for the La0.85Ba0.15MnO3 channel layer. These shifts, which are linearly proportional to the magnitude of ferroelectric remnant polarization, are induced by the accumulation charge due to the electric field.
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