Abstract
The doping profiles of lightly doped semiconductors are most commonly determined from capacitance-voltage measurements for junction devices. Such C-V measurements work well for large-area devices and lightly doped device, but they are not very suitable for high doping concentrations found in heavily doped devices (1). And the channel region under the MOSFET gate has an additional limitation. The small gate area has very small capacitances that are difficult to measure, making C-V based techniques difficult or impossible. In view of these experimental difficulties, so we tried electrical doping profiling measurement for MOSFET with short gate length and ultra thin oxide thickness and checked an agreement with ISE simulation results.
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