Abstract
Based on the intersubband transition theorem of the semiconductors, we have theoretically investigated the optical properties of a three-terminal silicene-based device under the irradiation of a circularly polarized terahertz electromagnetic field. The system spin–orbit-coupled electronic structure may be engineered to topological insulated (TI) and band insulated (BI) state, respectively, by the staggered sublattice potential from the back-gate voltage. It has been demonstrated that the dielectric functions and optical absorption spectra from the TI spin-up and spin-down subbands behave redshift and blueshift, respectively, with the increase in the sublattice potential, while those from the BI spin-up and spin-down subbands have been proven to be continually blue-shifted with the staggered sublattice potential. The novel features may be useful in the design of the spintronic and optoelectronic devices based on silicene.
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