Abstract
In this paper, the current-voltage characteristics of n-CdSe/p-Si heterostructures are analyzed using experimental data and electrical junction characteristics. To develop n-CdSe/p-Si heterojunctions, a wide band gap semiconducting layer of n-type CdSe thin film has been grown on a p-type Si (100) substrate at 100oC with different thickness by using the spray pyrolysis technique. The I-V characteristic of n-CdSe\ p-Si heterostructure has been measured in a room in the dark and under illumination (lamp/160 W). Also, the solar cell IV characteristics and efficiency were measured. The characteristic parameters of the structure such as barrier height, ideality factor, and series resistance were determined from the current-voltage measurement.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
