Abstract
AbstractThe experimental dislocation resistivity (or the deviation from Matthiessen's rule (DMR)) at 4.2 and 77 K of several single slip and multislip crystals was investigated. Additionally low‐field Hall effect measurements at 4.2K using a dc SQUID picovoltmeter were performed in order to study the anisotropy of electron–dislocation and electron‐impurity scattering directly. It is shown that oxygen annealing applied to increase the “electrical purity” of the crystals does not change the character of the scattering behaviour. The anisotropy parameters Adis for electron–dislocation scattering derived within the two‐group model are in good agreement with recent results for high‐purity polycrystals.
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