Abstract

The surface states of 3D topological insulators (TIs) exhibit a helical spin texture with spin locked at right angles with momentum. The chirality of this spin texture is expected to invert crossing the Dirac point, a property that has been experimentally observed by optical probes. Here, we directly determine the chirality below the Dirac point by electrically detecting spin-momentum locking in surface states of a p-type TI, Sb2Te3. A current flowing in the Sb2Te3 surface states generates a net spin polarization due to spin-momentum locking, which is electrically detected as a voltage on an Fe/Al2O3 tunnel barrier detector. Measurements of this voltage as a function of current direction and detector magnetization indicate that hole spin-momentum locking follows the right-hand rule, opposite that of electron, providing direct confirmation that the chirality is indeed inverted below Dirac point. The spin signal is linear with current, and exhibits a temperature dependence consistent with the semiconducting nature of the TI film and freeze-out of bulk conduction below 100 K. Our results demonstrate that the chirality of the helical spin texture of TI surface states can be determined electrically, an enabling step in the electrical manipulation of spins in next generation TI-based quantum devices.

Highlights

  • Three-dimensional (3D) topological insulators (TIs) form a new quantum phase of matter in which metallic surface states populated by Dirac fermions coexist with an insulating bulk[1,2,3,4,5]

  • We demonstrate the determination of the chirality of the spin texture below the Dirac point using transport measurement, through the direct electrical detection of spin-momentum locking in a p-type TI, Sb2Te3, probing the spin texture of the TI surface states below the Dirac point

  • A conductive nitrogen doped n-type 4H-SiC substrate (0.05 Ohms-cm) is used to facilitate the in situ scanning tunneling microscopy/spectroscopy (STM/STS) monitoring of the surface morphology and electronic structure to ensure optimal layer-by-layer spiral growth (Fig. 2a)[27]

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Summary

Introduction

Three-dimensional (3D) topological insulators (TIs) form a new quantum phase of matter in which metallic surface states populated by Dirac fermions coexist with an insulating bulk[1,2,3,4,5]. The Dirac point, surface-state spins are tangential to the Fermi surface contour with clockwise helicity, i.e., a quasi-particle (electron) moving in the +k direction is locked with −y spin polarization state, whereas below the Dirac point, the +k moving quasi-particle (hole) is locked with +y spin and exhibits counterclockwise helicity. This chirality inversion has been explicitly observed experimentally by spin-resolved ARPES in BiTlSe2 and Bi2Se324,25. The direct electrical access to the helical spin texture in the TI surface states is an enabling step in the electrical manipulation of spins in topological devices for spintronics and quantum computation applications

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