Abstract
We report on the electrical detection of cross relaxation (EDCR) processes in phosphorus-doped $\ensuremath{\gamma}$-irradiated silicon, where the dipolar-coupled electron spins of phosphorus and oxygen-vacancy complex (Si-SL1 center) undergo spin flip-flop transitions at specific magnetic field values for which the Zeeman splitting of the two centers become equal. Such cross relaxation signals are observed as the change in the sample photoconductivity at theoretically predicted magnetic fields $\mathit{without}$ application of resonance frequency. This EDCR is a very simple and sensitive method for detecting paramagnetic centers in semiconductors.
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