Abstract
The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.
Highlights
Zinc oxide has attracted a lot of interest recently, due to its direct and wide band gap
The electronic defect states of ZnO have been intensively investigated using deep level transient spectroscopy (DLTS) to find the evidence of intrinsic conductivity and the role of defect states
The Zn face has a lower amount of surface defect concentrations than the O face, which allows allowsfor foraahigher higherSchottky
Summary
Zinc oxide has attracted a lot of interest recently, due to its direct and wide band gap (3.4 eV at 300 K), high mobility, and simple processing, which make it suitable for optical applications such as light-emitting diodes (LEDs), and as a channel material for thin-film transistors (TFTs) in flat-panel displays [1,2,3,4]. The role of defect distribution has been widely examined using photoluminescence (PL) [6], electron paramagnetic resonance (EPR) [7], admittance spectroscopy (AS) [8], and deep level transient spectroscopy (DLTS) [9,10,11,12]. Among these techniques, DLTS has a high sensitivity and is suitable for the analysis of defect states and impurities using Schottky diodes or p–n junction devices [13]. The explicit role of the defect states has not been fully explained, especially regarding the defect state distribution
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