Abstract
Ion Beam Induced Deposition (IBID) is employed to fabricate three-dimensional nanoprotrusions on top of the recording pads of an active pixel sensor array (APS-MEA) featuring 4096 microelectrodes. Modified APS-MEAs are envisioned as enhanced tools to achieve real-time “in-cell” recordings from thousands of sensing elements, thus aiming to large-scale in-vitro registrations with unprecedented signal quality. A generalized electric model is proposed to address the revealed complexity of the neuron/electrode interface, and simulations have been conducted revealing the most advantageous cell/electrode coupling conditions. Preliminary results on the recording of spontaneous activity in cultured neuronal networks by means of nanostructured microelectrodes demonstrate the compatibility of IBID technology and APS-MEA infrastructure. The interface between cultured mammalian neurons and modified microelectrodes is revealed by FIB/SEM analysis, fostering the employment of the proposed electrical model for interpretation of electrical recordings from nanostructured microelectrodes.
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