Electrical control of spin polarization of conductance in Mn-encapsulated Si nanotube

Abstract

Compared with the use of magnetic methods, electrical manipulation of the spin polarization of a current could greatly reduce the devices’ dimensions and energy consumption. Using first-principles calculations, the spin-dependent electronic transport of a Mn-encapsulated Si nanotube contacted with Cu electrodes is investigated. As the gate voltage decreases, the conductance changes from spin unpolarized to spin polarized (the polarization could reach 90%). Electron transfer between Si and Mn atoms modulated by the gate voltage is found to be the physical mechanism. Because Si and Cu are fundamental materials in integrated circuits, these findings may be quite useful for developing Si-based spintronic devices.