Abstract
Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d<∼1.6nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ⩽∼1.0nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.
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