Abstract
We have addressed density of states and electrical conductivity of undoped biased bilayer graphene for both AA and AB stacking in the context of tight binding model hamiltonian. The effects of next nearest neighbor hopping amplitude for electrons and gap parameter on electronic density of states and electrical conductivity have been investigated. Green’s function approach has been implemented to find the behavior of electrical conductivity of bilayer graphene within linear response theory. We have found the temperature dependence of electrical conductivity for different values of gap parameter and bias voltage in the presence of neat nearest neighbor hopping integral. Our results for density of states of bilayer graphene in the presence of gap parameter show the increase of bias voltage reduces the band gap width. Also a peak in the dependence of thermal conductivity on temperature has been observed for all physical parameters. An anisotropic behavior for electrical conductivity of unbiased simple bilayer graphene in the presence of gap parameter has been resulted.
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