Abstract
Electrical conductivity measurements of Th 3P 4-type Eu Ln 2S 4 ( Ln = LaGd) compounds have been made as functions of temperature and sulfur vapor pressure. These compounds are all p-type semiconductors, and their conductivities at room temperature have almost the same values for the specimens from EuLa 2S 4 to EuNd 2S 4 but increase on going from EnNd 2S 4 to EuGd 2S 4. In addition, the conductivity of EuGd 2S 4 is sensitive to sulfur vapor pressure and obeys the relationship σ ∝ P 1 6 S 2 . The mechanism of electrical transport in these compounds is discussed.
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