Electrical conductivity of TaOx as function of composition and temperature

Abstract

The ability to model the resistive switching devices depends on input material parameters and is particularly sensitive to values of electrical conductivity of the functional material as a function of composition and temperature. Here we report the results of conductivity measurements of TaOx with 0<x<2.36 and a temperature range of 293-800 K performed using Transmission Line Method structures with integrated on-chip heaters. The conductivity exhibits the thermally activated behavior throughout the composition and temperature range with the activation energy (EAC) changing from 0.34 eV at x=2.36 to 0.016 eV at x=1.