Abstract
This work deals with the research of the electric properties of thin film layer of reduced graphene oxide. A structure of graphene oxide (GO) is represented by randomly distributed on a surface of substrate small islets of graphene with sp2 hybridized bonds surrounded by wide areas with sp3 bonds functionalized by oxygen groups. When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Reduced graphene oxide, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system, therefore the partly semiconductive properties could be observed.
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