Abstract
AbstractIn this work the results of DC conductivity measurements of polycrystalline p‐sexiphenyl thin films are presented. The investigations concerned the effect of temperature, film thickness and electric field on the DC conductivity mechanism. The thickness of the investigated material varied from 0.2 to 2.5 μm. The measurements were carried out for different electrode polarities of the 0 ‐100 V voltage and at temperatures ranging from 15 to 325 K. Thin films of p‐sexiphenyl were obtained by controlled vacuum sublimation on BK‐7 glass substrate with gold and aluminium electrodes. Analyzing the obtained results we conclude that injection of the charge carrier from electrodes into the investigated material proceeds by thermionic emission and field emission and it is dependent on temperature and external electric field. The charge carrier transport is controlled by localized states (traps) in the forbidden energy gap. The activation energy calculated from formula ln I = f(1/kT) varied from kT for low temperature up to 1.0 eV.
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