Abstract
Interest in diamond-like carbon (DLC) thin films has increased considerably in the last few years. It is suggested that DLC films may be used for electronic devices, especially working at high temperatures. The subject of this contribution is the electrical conduction of a metal/DLC/ Si system. The investigated DLC films were prepared by two methods: radio-frequency plasma chemical vapour deposition (RF-PCVD) and pulsed cathodic-arc discharge (PCAD) on silicon substrates. The metal/DLC/silicon heterojunctions show rectifying characteristics. The rectifying character of the current-voltage behaviour may be caused by a thin Interfacial SiO2 sublayer existing between the DLC film and silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.