Abstract
The new organometallic feedstock MeMn(CO)5 has been used for the MOCVD growth of Cd1−xMnxTe (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg1−x−yCdxMnyTe was grown by in-situ annealing og HgTe overlayers on Cd1−xMnxTe epilayers. Adherent films of Hg1−xMnxTe on glass were grown by MOCVD. The electrical properties show semi-metal behaviour, and XRD and other properties indicate a zinc-blende structure.
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