Abstract
SiC bodies with an excess of C or Si (C-SiC and Si-SiC, respectively) were prepared by spark plasma sintering at 2023–2373 K, and their electrical properties were studied. The relative densities of the SiC bodies sintered at 2373 K were 74–87%, while their electrical conductivities increased with an increase in the excess amount of C and Si. Pristine, C-SiC, and Si-SiC bodies exhibited n-type conduction, and their Seebeck coefficients showed the highest value in the range -250 to -300 µV·K-1, at 673–773 K.
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