Abstract
Synthesis of multilayer graphene on copper wires by a chemical vapor deposition method is reported. After copper etching, the multilayer tube collapses forming stripes of graphitic films, their electrical conductance as a function of temperature indicate a semiconductor-like behavior. Using the multilayer graphene stripes, a cross junction is built and owing to its electrical behavior we propose that a tunneling process exists in the device.
Highlights
Graphene and related systems are of great interest due to their physical properties and by their possible applications
We explore the synthesis and the study of some electrical properties of similar collapsed tubes, but at the macroscopic scale, depositing multilayer graphene on copper wires by a chemical vapor deposition (CVD) method
Bilayer graphene was grown on copper wires by means of CVD method with methane as the carbon source
Summary
Graphene and related systems are of great interest due to their physical properties and by their possible applications. Graphene is a zero band gap semimetal, chemical and geometrical modifications of this material allow different electronic and optical properties. Due to the low carbon solubility in copper, the reaction of hydrocarbon species is limited to a region near to the copper surface, allowing the synthesis of graphene in almost any arbitrary form of the copper surface. We exploit this advantage to synthesize few-layer graphene [11] on cylindrical copper surface by CVD at atmospheric pressure
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