Abstract
Current noise properties of the intrinsic a‐Si:H samples, prepared at various substrate temperatures (Ts), were investigated and their noise power spectra were found to exhibit 1/fβ frequency dependence (0.8<β<1.2) in low frequency region (10−2−5 Hz) at room temperature. The absolute noise power was found to increase with increasing Ts, and its variation on DC current was found to show power law dependence with exponents over 1.6.
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