Abstract
Materials scientists are currently shifting from purely inorganic, organic and silicon-based materials towards hybrid organic-inorganic materials to develop increasingly complex and powerful electronic devices. In this context, it is undeniable that conductive metal-organic frameworks (MOFs) and bistable coordination polymers (CPs) are carving a niche for themselves in the electronics world. The tunability and processability of these materials alongside the combination of electrical conductivity with porosity or spin transition offers unprecedented technological opportunities for their integration into functional devices. This review aims to summarise the chemical strategies that have guided the design of this type of materials and the identified opportunities for further development. We also examine the strategies to process them as thin films and stress the importance of analysing the effects of nanostructuration on their physical properties that might be crucial for device performance. Finally, we showcase relevant examples of functional devices that have received increasing attention from researchers and highlight the opportunities available for more sophisticated applications that could take full advantage of the combination of electrical conductivity and magnetic bistability.
Highlights
Electronic devices shape the world as we know it
The combination in the toolbox provided by coordination chemistry and crystal engineering together with the versatility of molecular frameworks is a fruitful playground for the chemical design of materials that combine properties such as porosity, electrical conductivity and magnetic bistability, all relevant to the development of functional devices
The works highlighted above confirm how the design principles required for endowing porous frameworks with electrical conductivity have boosted the development of multiple materials with fine control over charge transport
Summary
Electronic devices shape the world as we know it. The tremendous technological advances that we experienced in the last 50 years relied on the progressive miniaturization of these devices and their components to construct increasingly complex and powerful platforms. This achievement has been possible thanks to low-cost production through scalable complementary metal-oxide-semiconductor (CMOS). Traditional CMOS materials (metal chalcogenides) suffer from a fundamental design limitation due to the scarcity of usable inorganic anions. The electronics field is on the verge of a dramatic transition from a materials point of view.
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