Abstract
Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200–350 K on p-type TlGaSe 2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0×10 15 and 1.3×10 16 cm −3, respectively. A hole and electron effective masses of 0.520 m 0 and 0.325 m 0, respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole–phonon short-range interactions scattering with a hole–phonon coupling constant of 0.17.
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