Abstract
In this reported study, conductive composite conversion films on an AZ91D magnesium alloy were prepared by adding Ga3+ to a deposition solution that contained molybdenum, titanium and manganese ions. The Ga3+ significantly improved the conductivity and corrosion resistance of the resulting films. The electrical contact resistance (ECR) of the Molybdenum/Titanium/Manganese (MTM) film decreased from 0.436 Ω/in2 to 0.106 Ω/in2 at 200 psi when Ga3+ was added to form the Molybdenum-Titanium-Manganese-Gallium (MTMG) film. In addition, the polarization resistance of the Ga3+ amended film increased from 633.1 Ω·cm2 to 1930.835 Ω·cm2, MTMG showed obvious passivation behavior. The Ga3+ doping appeared to increase the carrier concentration and narrow the band gap of the semiconductor film. The N-type semiconductor carrier concentration increased from 2.11 × 1019 cm−3 to 7.052 × 1019 cm−3 in the MTMG film vs the MTM film. The P-type semiconductor carrier concentration in the MTMG film increased from 2.727 × 1018 cm−3 to 3.480 × 1019 cm−3 compared to the MTM film. The MTM band gap decreased from 2.916 eV to 2.714 eV in the MTMG film, which was attributed to the cross-doping of Ga3+ with transition metals in the MTMG material. The MTMG film had a three-layer structure, which preferentially formed a thin film on the β-phase and subsequently grew layer by layer.
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