Abstract
D.c. electrical properties of SiO x -SnO (300 nm) thin films forming part of a metal-insulatormetal (MIM) structure are reported. The conduction process is related to the field-assisted thermal excitation of electrons from the trapping centres in the forbidden band gap to the conduction band (Poole-Frenkel effect). The energy gap between the trapping level and the bottom of the conduction band in 80% SiO x -20% SnO in thin films (300 nm) is found to be equal to 0.50 eV. The level of conduction in the composite films is observed to increase with an increase in the content of SnO.
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