Abstract
The DC electrical conduction mechanism in vacuum evaporated Al–Bi 2Te 3–Al thin film sandwich system in the thickness range 350–3300 Å at different temperatures (300–483 K) was found to be Richardson–Schottky type. The samples showed a Log J vs. F 1/2 dependence, from which the field lowering coefficient β was evaluated. The height Φ 0 of the potential barrier was determined. Variation of activation energy with applied voltages and temperatures was investigated and the results are discussed. From the C – V analysis the flat band potential and the ionized charge density was found to be 2.37 eV and 7.992×10 27 cm 4, respectively. Hot probe method was employed to identify the type of conduction in these films and are found to be p-type.
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