Abstract
The electrical conduction of chalcogenide semiconductor CuI-AgI-As2Se3 and PbI2-AgI-As2Se3 films obtained by the chemical deposition from n-butylamine, depending on the composition of films, has been studied. It has been shown that the electrical properties of chalcogenide glass and films based on them within the experimental error are characterized by the same values. This is explained by the model of the dissolution of glasslike semiconductors in amines.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
